NJW0281G 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: SPTECH NJW0281G
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 15A
- Power Dissipation (Pd): 150W
- Transition Frequency (fT): 20MHz
- DC Current Gain (hFE@Ic,Vce): 75@3A,5V
- Collector Cut-Off Current (Icbo): 10uA
- Collector-Emitter Breakdown Voltage (Vceo): 250V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@5A,500mA
- Package: TO-3PN
- Manufacturer: SPTECH
- Series: -
- Packaging: Tube
- Part Status: Active
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
- Power - Max: 150W
- Frequency - Transition: 30MHz
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P-3L
- Base Part Number: NJW02
- detail: Bipolar (BJT) Transistor NPN 250V 15A 30MHz 150W Through Hole TO-3P-3L